Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials
Founded at 2009

Features of the mechanism of formation of morphology of aluminosilicate films on aluminum substrate

A.I. Gorshkov, E.N. Gribanov

Orel State University named after I.S. Turgenev

DOI: 10.26456/pcascnn/2023.15.701

Short communication

Abstract: The features of the formation of morphology of thin aluminosilicate films obtained electrochemically on an aluminum substrate from aqueous solutions of sodium silicate and sodium hydroxide have been systematically studied by atomic force microscopy. The effect of stress on the shape and characteristic dimensions of the surface elements of aluminosilicate films is shown. Films synthesized at a lower voltage (8 V) are characterized by an amorphous surface consisting of globules whose size ranges from 500 nm to 2,5 microns, for samples obtained at a higher voltage (more than 16 V), parallelepipeds with linear dimensions of 150-250 nm act as are found to be structural elements. It is established that at the first stage of synthesis, the surface of the aluminum anode is etched, and the resulting cells act as pores in which the aluminosilicate phase is formed. An assumption is made about the formation of films along the path of autocatalytic nucleation and about a direct dependence of the rate of formation of the crystalline phase on the voltage at which the synthesis is carried out.

Keywords: synthetic aluminosilicates, growth mechanism, thin films, surface morphology, electrochemical synthesis

  • Alexander I. Gorshkov – Senior Lecturer, Department of Chemistry, Orel State University named after I.S. Turgenev
  • Evgeny N. Gribanov – Ph. D., Full Docent, Head of the Department of Chemistry, Orel State University named after I.S. Turgenev


Gorshkov, A.I. Features of the mechanism of formation of morphology of aluminosilicate films on aluminum substrate / A.I. Gorshkov, E.N. Gribanov // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2023. — I. 15. — P. 701-707. DOI: 10.26456/pcascnn/2023.15.701. (In Russian).

Full article (in Russian): download PDF file


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