Method of ionic mixing for silicide layer formation
G.A. Mustafaev1, A.G. Mustafaev2, V.A. Panchenko1, N.V. Cherkesova1
1Kabardino-Balkarian State University, Nalchik, Russia
2Dagestan State University of National Economy, Makhachkala, Russia
Abstract: Ion implantation with recoil ions or ion mixing based on the introduction of the required impurity from the surface layers during the transfer of the kinetic energy of the primary beam to them have great prospects for obtaining structures and compounds with desired properties. In the process of ranging of very large scale integrated circuits, the parasitic resistance of interconnections and the non-ohmic nature of contacts are the limiting factors. Refractory metal silicides are promising materials for use in metallization systems. In this work a study was carried out on the introduction of phosphorus ions into molybdenum-silicon systems. The results obtained demonstrate the possibility of the molybdenum silicide formation at a low temperature using implantation of ions that cause ionic mixing. The developed technology makes it possible to achieve a homogeneous interface between the silicide and silicon with the necessary electrophysical characteristics of metalization and ohmic contacts. Due to the deepening of the interface into the bulk of the semiconductor, the effect of the silicon surface state on parameters of ohmic contacts decreases. As a result their necessary stability and reproducibility are ensured.
Keywords: ion implantation, ohmic contact, metallization, silicide, sputter deposition, heat treatment, integrated circuit.
Mustafaev, G.A. Method of ionic mixing for silicide layer formation / G.A. Mustafaev, A.G. Mustafaev, V.A. Panchenko, N.V. Cherkesova // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. – 2020. – I. 12. – P. 868-874. DOI: 10.26456/pcascnn/2020.12.868. (In Russian).
Full text (in Russian): download PDF file
Comments are closed.