Method of ionic mixing for silicide layer formation

G.A. Mustafaev¹, A.G. Mustafaev², V.A. Panchenko¹, N.V. Cherkesova¹

¹ Kabardino-Balkarian State University
² Dagestan State University of National Economy

DOI: 10.26456/pcascnn/2020.12.868

Short communication

Abstract: Ion implantation with recoil ions or ion mixing based on the introduction of the required impurity from the surface layers during the transfer of the kinetic energy of the primary beam to them have great prospects for obtaining structures and compounds with desired properties. In the process of ranging of very large scale integrated circuits, the parasitic resistance of interconnections and the non-ohmic nature of contacts are the limiting factors. Refractory metal silicides are promising materials for use in metallization systems. In this work a study was carried out on the introduction of phosphorus ions into molybdenum-silicon systems. The results obtained demonstrate the possibility of the molybdenum silicide formation at a low temperature using implantation of ions that cause ionic mixing. The developed technology makes it possible to achieve a homogeneous interface between the silicide and silicon with the necessary electrophysical characteristics of metalization and ohmic contacts. Due to the deepening of the interface into the bulk of the semiconductor, the effect of the silicon surface state on parameters of ohmic contacts decreases. As a result their necessary stability and reproducibility are ensured.

Keywords: ion implantation, ohmic contact, metallization, silicide, sputter deposition, heat treatment, integrated circuit

• Gasan A. Mustafaev – Dr. Sc., Full Professor, Department of Electronics and Information Technologies, Kabardino-Balkarian State University
• Arslan G. Mustafaev – Dr. Sc., Full Professor, Department of Information Technologies and Information Security, Dagestan State University of National Economy
• Valery A. Panchenko – Ph. D., Docent, Department of Physical Foundations of Micro- and Nanoelectronics, Kabardino-Balkarian State University
• Natalya V. Cherkesova – Ph. D., Docent, Department of Electronics and Information Technologies, Kabardino-Balkarian State University

Reference:

Mustafaev, G.A. Method of ionic mixing for silicide layer formation / G.A. Mustafaev, A.G. Mustafaev, V.A. Panchenko, N.V. Cherkesova // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2020. — I. 12. — P. 868-874. DOI: 10.26456/pcascnn/2020.12.868. (In Russian).

Full article (in Russian): download PDF file

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