A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation
A.A. Smirnov1, I.A. Kaplunov2, A.A. Ol’nev1, A.N. Nikiforova1
1Institute of Physical and Technical Problems
2Tver State University
Abstract: The features of spectrum formation in CdTe (CdZnTe) detectors under gamma quanta radiation are presented. The main characteristics of a semiconductor detector, i.e. the energy resolution and the registration efficiency, are determined. The results can be used as a basis for physical and mathematical models of operation of CdTe (CdZnTe) semiconductor detectors for registration of gamma- and x-ray radiation over a wide energy range.
Keywords: semiconductor detectors, cadmium telluride.
Smirnov, A.A. A mathemetical model of the charge accumulation and the spectrum formation in detectors on the basis of CdTe (CdZnTe) at the gamma-quanta irradiation / A.A. Smirnov, I.A. Kaplunov, A.A. Ol’nev, A.N. Nikiforova // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials: Interuniversity collection of proceedings / Ed. by V.M. Samsonov, N.Yu. Sdobnyakov. – Tver: TSU, 2017. – I. 9. – P. 465-474.
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