The features of application of eutectic melts based on indium and gallium
E.V. Maraeva, N.V. Permiakov, V.A. Moshnikov
Saint Petersburg Electrotechnical University «LETI»
Abstract: In a brief review, the main trends in the use at the present time of eutectic melts based on indium and gallium (EGaIn) are considered. Examples of the use of EGaIn in transistors, capacitors, electrodes, and probe systems (including those in four-probe techniques) are given. The main properties of EGaIn and the spreading of a drop of EGaIn melts are considered, and a detailed scheme of the point-contact four-probe method is given. The main issues discussed in the application of EGaIn in the field of obtaining liquid electrodes, including the formation of gallium oxides, the possibility is revealed of the influence of the spatial environment on the EGaIn droplet and manipulation of microdroplets,. It has been established that among the works of 2022-2023, a large segment is occupied by publications in the field of flexible electronics, intelligent robots, as well as wearable devices (for example, the creation of a metatissue with an antibacterial effect and the ability to be heated with a low energy consumption) and biomedical applications (the development of smart gloves for manipulating gestures, measuring the heart rate of insects).
Keywords: eutectic melts, EGaIn, liquid probes, flexible electronics
- Evgeniya V. Maraeva – Ph.D., Docent, Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University «LETI»
- Nikita V. Permiakov – Ph.D., Docent, Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University «LETI»
- Vyacheslav A. Moshnikov – D.Sci, Professor, Micro- and Nanoelectronics Department, Saint Petersburg Electrotechnical University «LETI»
Maraeva, E.V. The features of application of eutectic melts based on indium and gallium / E.V. Maraeva, N.V. Permiakov, V.A. Moshnikov // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2023. — I. 15. — P. 760-776. DOI: 10.26456/pcascnn/2023.15.760. (In Russian).
Full article (in Russian): download PDF file
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