Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. Founded at 2009

A planar array of GST225-based memristor elements

V.A. Mikhalevsky1, A.A. Burtsev1, V.V. Ionin1, A.A. Nevzorov1,2, A.V. Kiselev1, N.N. Eliseev1, A.A. Lotin1,3

1 National Research Centre «Kurchatov Institute»
2 National University of Science and Technology MISIS
3 Mendeleev University of Chemical Technology

DOI: 10.26456/pcascnn/2026.18.NNN1

Original article

Abstract: This paper presents a modeling study of the electrical resistance in a memristor structure based on the phase-change Ge₂Sb₂Te₅ material. The changes in resistance are driven by some structural transformations in the active region of the memory cell under the influence of electrical control pulses. A novel planar architecture for memristor structures has been demonstrated. Using the simulation data for this architecture, temperature dynamics and phase transitions are analyzed within the framework of the classical Stefan problem. Optimal parameters for the electrical control pulses are identified. The results demonstrate that once the phase transition threshold is reached, the resistance switching time becomes essentially independent of the control parameters. The proposed memristor architecture exhibits advantages in both power efficiency and the capability for multilevel resistance states, positioning it as a key component for next-generation memristive technologies.

Keywords: memristor, chalcogenides, phase change materials, thin films, amorphization

  • Vladimir A. Mikhalevsky – Researcher, National Research Centre «Kurchatov Institute»
  • Anton A. Burtsev – Researcher, National Research Centre «Kurchatov Institute»
  • Vitaly V. Ionin – Researcher, National Research Centre «Kurchatov Institute»
  • Alexey A. Nevzorov – Ph. D., Researcher, National Research Centre «Kurchatov Institute», Researcher, Laboratory of Photonic Gas Sensors National University of Science and Technology MISIS
  • Alexey V. Kiselev – Ph. D., Senior Researcher, National Research Centre «Kurchatov Institute»
  • Nikolay N. Eliseev – Junior Researcher, National Research Centre «Kurchatov Institute»
  • Andrey A. Lotin – Dr. Sc., Deputy Head of the branch, National Research Centre «Kurchatov Institute», Deputy Director of the Department of Scientific and Technical Policy Mendeleev University of Chemical Technology

For citation:

Mikhalevsky V.A., Burtsev A.A., Ionin V.V., Nevzorov A.A., Kiselev A.V., Eliseev N.N., Lotin A.A. Planarnyj massiv memristornykh elementov na osnove GST225 [A planar array of GST225-based memristor elements], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2026, issue 18, pp. __-__. DOI: 10.26456/pcascnn/2026.18.NNN1. ⎘

Full article (in Russian): download PDF file

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