Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review

doi:10.26456/pcascnn/2025.17.636

Advanced methods for growth thin films of GaAs_1-x-yN_xBi_y: a review

O.V. Devitsky

Federal Research Center Southern Scientific Center of the RAS

DOI: 10.26456/pcascnn/2025.17.636

Review

Abstract: This review summarizes the latest advances in the fabrication of thin films of GaAs_1-x-yN_xBi_y solid solutions for potential applications in optoelectronics. It is demonstrated that GaAs_1-x-yN_xBi_y thin films can be produced using molecular beam epitaxy, metal-organic vapor phase epitaxy, and pulsed laser deposition. However, the process remains technically challenging primarily due to the numerous parameters that influence the structural properties of the films. The highest concentrations achieved were 4,7% bismuth and 2% nitrogen in epitaxial thin films grown by molecular beam epitaxy. The bismuth content decreases linearly with increasing the substrate temperature up to 410°C, assuming a constant excess flux of bismuth atoms. Notably, at 350°C, it was possible to grow thin films without the bismuth droplet formation on the surface. Additionally, it has been shown that CuPt-type ordering can occur in GaAs_1-x-yN_xBi_y alloys. This ordering could enable control over the local atomic environment of bismuth and nitrogen atoms through long-range chemical ordering. For high-quality GaAs_0,964N_0,018Bi_0,018 films grown at 450°C via metal-organic vapor phase epitaxy, a decrease in band gap energy of approximately 141 meV/% N was observed as the nitrogen concentration increased. While pulsed laser deposition currently produces polycrystalline films with relatively low nitrogen content, it holds significant potential for further development and optimization in this field.

Keywords: GaAsNBi, thin films, III-V-N-Bi, molecular beam epitaxy, metal-organic chemical vapor deposition, pulsed laser deposition

Oleg V. Devitsky – Ph. D., Leading Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the RAS

For citation:

Devitsky O.V. Sovremennye metody polucheniya tonkikh plenok GaAs_1-x-yN_xBi_y: obzor [Advanced methods for growth thin films of GaAs_1-x-yN_xBi_y: a review], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2025, issue 17, pp. 636-648. DOI: 10.26456/pcascnn/2025.17.636. ⎘

Full article (in Russian): download PDF file

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