Technologies and development prospects of ferroelectric memory devices
S.L. Gafner, A.A. Cherepovskaya, L.V. Redel, D.A. Ryzhkova, Zh.V. Golovenko
Katanov Khakass State University
DOI: 10.26456/pcascnn/2025.17.606
Original article
Abstract: Ferroelectric memory is one of the most promising types of non-volatile solid-state memory due to its high speed, low power consumption and resistance to external influences. Its operating principle is based on the ability of ferroelectric materials to maintain the polarization direction after removing the external voltage. The paper considers the physical principles of this type of memory, the features of the 1T, 1T-1C, 2T-2C, and chain-FRAM cell architectures. Particular attention is paid to the problem of destructive reading, typical for most ferroelectric structures, and modern methods for solving it: acoustic, pyroelectric, photoelectric and electro-optical interrogation methods. In addition, an analysis is made of both the scaling limitations associated with the use of traditional ferroelectric materials, such as lead zirconate titanate, and the search for alternative materials including hafnium oxide, which provides stable polarization at a thickness up to 10 nm. A review of technological solutions aimed at improving the scalability and reliability of ferroelectric memory in the context of modern requirements for microelectronics is conducted.
Keywords: non-volatile memory, ferroelectric memory, ferroelectrics, cell structure, destructive reading
- Svetlana L. Gafner – Dr. Sc., Docent, Professor, Department of Mathematics, Physics and Information Technology, Katanov Khakass State University
- Arina A. Cherepovskaya – Master of Science of specialty «Modern digital technologies in education», Katanov Khakass State University
- Larisa V. Redel – Dr. Sc., Docent, Department of Mathematics, Physics and Information Technology, Katanov Khakass State University
- Daria A. Ryzhkova – Senior Lecturer, Department of Mathematics, Physics and Information Technology, Katanov Khakass State University
- Zhanna V. Golovenko – Dr. Sc., Docent, Department of Mathematics, Physics and Information Technology, Katanov Khakass State University
For citation:
Gafner S.L., Cherepovskaya A.A., Redel L.V., Ryzhkova D.A., Golovenko Zh.V. Tekhnologii i perspektivy razvitiya ferroelektricheskikh zapominayushchikh ustrojstv [Technologies and development prospects of ferroelectric memory devices], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2025, issue 17, pp. 606-614. DOI: 10.26456/pcascnn/2025.17.606. ⎘
Full article (in Russian): download PDF file
References:
1. Kernighan B.W. Understanding the digital world: what you need to know about computers, the internet, privacy, and security. Princeton, Princeton University Press, 2017, 256 p. DOI: 10.2307/j.ctvc775pg.
2. Nonvolatile memory technologies with emphasis on Flash. A comprehensive guide to understanding and using NVM devices, ed. by. J.E. Brewer, M. Gill. New Jersey. A John Wiley & Sons Inc., 2008, 759 p.
3. Krasnikov G.Ya. Ehnergonezavisimaya tverdotel'naya pamyat' v sovremennoi mikroehlektronike [Non-volatile solid-state memory in modern microelectronics], Nanotekhnologii v ehlektronike [Nanotechnology in electronics]. M., Tekhnosfera, 2015, pp. 461-476. (In Russian).
4. Romanova I. Novye vidy pamyati – razrabotki i perspektivy primeneniya [New types of memory – developments and application prospects], Ehlektronika: nauka, tekhnologiya, biznes, [Electronics: Science, Technology, Business], 2010, no. 2, pp. 26-33. (In Russian).
5. Gafner Yu.Ya., Ryzhkova D.A., Zamulin I.S. Otsenka primenimosti nanoklasterov splava medi i zolota v kachestve aktivnogo sloya yacheek fazoinversnoi pamyati [Evaluation of the applicability of copper-gold alloy nanoclusters as an active layer of phase-inversion memory cells], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2019, issue 11, pp. 443-448. DOI: 10.26456/pcascnn/2019.11.443. (In Russian).
6. Gafner Yu.Ya., Gafner S.L., Redel L.V. Nanostruktury kak material dlya fazo-inversnoi pamyati [Nanostructures as a material for phase-inversion memory], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2018, issue 10, pp. 210-218. DOI: 10.26456/pcascnn/2018.10.210. (In Russian).
7. Gafner Yu.Ya., Bashkova D.A., Gafner S.L. Otsenka primenimosti malykh nanochastits serebra v kachestve yacheek PCM pamyati [Evaluation of the applicability of small silver nanoparticles as PCM memory cells], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2018, issue 10, pp. 219-225. DOI: 10.26456/pcascnn/2018.10.219. (In Russian).
8. Takashima, D. Overview of FeRAMs: Trends and Perspectives, IEEE 11-th Annual Non-Volatile Memory Technology Symposium, 7-9 November 2011, Shanghai, China. Shanghai, IEEE Publ., 2011, pp. 36-41. DOI: 10.1109/NVMTS.2011.6137107.
9. Abdullaev D.A., Milovanov R.A., Volkov R.L. et. al. Segnetoehlektricheskaya pamyat': sovremennoe proizvodstvo i issledovaniya [Ferroelectric memory: state-of-the-art manufacturing and research], Rossiiskii tekhnologicheskii zhurnal [Russian Technological Journal], vol. 8, no. 5, pp. 44-67. DOI: 10.32362/2500-316X-2020-8-5-44-67. (In Russian).
10. Shurygina V. Ehnergonezavisimaya pamyat'. Kto pobedit v gonke? Chast' 2 [Non-volatile memory. Who will win the race? Part 2], Ehlektronika: nauka, tekhnologiya, biznes, [Electronics: Science, Technology, Business], 2008, no. 6, pp. 36-47. (In Russian).
11. Lukichev V.F., Shikolenko Yu.L. Sovremennaya ehlementnaya baza zapominayushchikh ustroistv [Modern element base of storage devices], Nano- i mikrosistemnaya tekhnika [Nano- and microsystems technology], 2015, no. 11 (184), pp. 40-49. (In Russian).
12. Zhang, K. Embedded memories for nano-scale VLSIs. NewYork, Springer Science & Business Media Inc., 2009, 279 p. DOI: 10.1007/978-0-387-88497-4.
13. Zaitsev I. Sravnenie novykh tekhnologii ehnergonezavisimoi pamyati [Comparison of new non-volatile memory technologies], Komponenty i tekhnologii [Components and technologies], 2004, no. 4 (39), pp. 66-70. (In Russian).
14. Ali Z., Paul S., Mukhopadhyaya S. et. al. FeRAM: a paradigm of advanced data storage technology, International Journal for Research in Applied Science and Engineering Technology,2023, vol. 11, issue 12, pp. 1684-1691. DOI: 10.22214/ijraset.2023.57682.
15. Iuga A.R., Lindfors-Vrejoiu I., Boni G.A. Ultrafast nondestructive pyroelectric reading of FeRAM memories, Infrared Physics & Technology, 2021, no. 116, art. no. 103766, 5 p. DOI: 10.1016/j.infrared.2021.103766.
16. Mikolajick T., Dehm C., Hartner W.et. al. FeRAM technology for high density applications, Microelectronics Reliability, 2001, vol. 47, issue 7, pp. 947-950. DOI: 10.1016/S0026-2714(01)00049-X.
17. Ishiwara, H. Ferroelectric random access memories, Journal of Nanoscience and Nanotechnology, 2012, vol. 12, no. 10, pp. 7619-7627. DOI: 10.1166/jnn.2012.6651.
18. Yao K., Chen S., Lai S.C. et.al Enabling distributed intelligence with ferroelectric multifunctionalities, Advance Science, 2022, vol. 9, issue 1, art. no. 2103842, 30 p. DOI: 10.1002/advs.202103842.
19. Mueller S., Summerfelt S.R., Muller J. et al. Ten-nanometer ferroelectric Si:HfO2 films for next-generation FRAM capacitors, Electron Device Letters, 2012, vol. 33, issue 9, pp. 1300-1302. DOI: 10.1109/LED.2012.2204856.
20. Vorotilov K.A., Sigov A.S. Ferroelectric memory, Physics of the Solid State, 2012, vol. 54, issue 5, pp. 894-899. DOI: 10.1134/S1063783412050460.