Pulsed laser deposition OF III-V semiconductor thin films: review
O.V. Devitsky1,2
1 Federal Research Center Southern Scientific Center of the Russian Academy of Sciences
2 North Caucasus Federal University
DOI: 10.26456/pcascnn/2024.16.621
Review
Abstract: This review highlights the latest advancements in pulsed laser deposition of III-V semiconductor thin films on various substrates. The pulsed laser deposition method is shown to be highly effective and distinct from other thin film deposition techniques due to its discrete nature. Epitaxial growth of III-V thin films is crucial for developing new optoelectronic devices. The review presents experimental data on how various pulsed laser deposition parameters affect the structural, optical, and electrical properties as well as the stoichiometry of binary and multicomponent III-V thin films. It is demonstrated that achieving the highest structural quality in III-V thin films requires using femtosecond and nanosecond lasers with wavelengths ranging from 248 nm to 532 nm, a pulse energy density of no more than 3 J/cm², and substrate temperatures between 300 and 400°C. Additionally, the target material should be monolithic and have the highest possible density.
Keywords: pulsed laser deposition, thin films, III-V compounds, substrate temperature, energy density, stoichiometry
- Oleg V. Devitsky – Ph. D., Leading Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Senior Researcher, Scientific and Educational Center for Photovoltaics and Nanotechnology North Caucasus Federal University
Reference:
Devitsky, O.V. Pulsed laser deposition OF III-V semiconductor thin films: review / O.V. Devitsky // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2024. — I. 16. — P. 621-630. DOI: 10.26456/pcascnn/2024.16.621. (In Russian).
Full article (in Russian): download PDF file
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