Structure and composition of thin GaAs1-x-yNxBiy films produced by pulsed laser deposition
1 Federal Research Center Southern Scientific Center of the Russian Academy of Sciences
2 North Caucasus Federal University
Abstract: Uniaxial cold pressing was used to fabricate GaAs0,9Bi0,1 targets with 10% Bi content. Thin
films of GaAs1-x-yNxBiy onto a GaAs (100) substrate were obtained from the formed GaAs0,9Bi0,1 target
by pulsed laser deposition in an argon-nitrogen gas atmosphere, and their structure and composition
were studied. It is shown that on the surface of the film there are predominantly small microdroplets
with a diameter of less than 0,5 μm, formed by Bi atoms. Large microdroplets with a diameter of 2 to 6
μm consist partly of Bi and Ga. No microdroplets formed only from Ga were found. It is noted that
small Ga microdroplets are adsorbed on the surface of large Bi microdroplets without forming a GaBi
alloy. It was also found that the formation of Bi microdroplets also occurs due to the segregation of Bi
atoms on the film surface. The energy-dispersive spectroscopy data make it possible to characterize
the resulting thin films as GaAs0,995N0,015Bi0,03. The mean square roughness of the film surface was 12,2
nm. The resulting GaAs0,995N0,015Bi0,03 film has a polycrystalline structure. An analysis of the X-ray
diffraction data showed that the film grew according to the Volmer-Weber law, when islands are
nucleated and their sizes subsequently increase. The nuclei are most likely formed by GaAs, GaN,
GaAsN, GaAsBi, and GaAsNBi. The calculated full width at half height for GaAs0,995N0,015Bi0,03 was –
0,8656ʺ, and the average crystallite size was 1,6 nm.
Keywords: thin films, III-V-N-Bi, GaAs1-x-yNxBiy, pulsed laser deposition, diluted nitrides, diluted bismuthides
- Oleg V. Devitsky – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Senior Researcher, Scientific and Educational Center for Photovoltaics and Nanotechnology North Caucasus Federal University
Devitsky, O.V. Structure and composition of thin GaAs1-x-yNxBiy films produced by pulsed laser deposition / O.V. Devitsky // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2022. — I. 14. — P. 593-601. DOI: 10.26456/pcascnn/2022.14.593. (In Russian).
Full article (in Russian): download PDF file
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