The growth of InAlN/Si heterostructures with a high content of In
V.A. Lapin1,2, I.V. Kasyanov1,2
1 Federal Research Center Southern Scientific Center of the Russian Academy of Sciences
2 North-Caucasus Federal University
DOI: 10.26456/pcascnn/2022.14.168
Original article
Abstract: InAlN films on Si (111) were obtained by the ion-beam deposition with various technological growth parameters. The results of the study of grown films by the scanning electron microscopy were used to identify the conditions for obtaining InAlN continuous films. Due to the mismatch of the lattice parameters of the film and substrate, the growth has an island character, a solid film was obtained only with the following technological parameters: the energy level of the beam U = 600 eV at the ion current of the beam ji = 32 mA, with the neutralization current of the beam jn = 32 mA, the substrate temperature of 400°C. With an increase of the nitrogen concentration to 80-90% in the gas mixture, a transition from an island to an epitaxial growth mechanism took place. The ratio of the elements In, Al and N in the film showed that the active plasma of the ion beam breaks down weakly bound ions and leaves only normally embedded nitrogen atoms N-3, but excessively strong exposure leads to metallization of the films.
Keywords: heteroepitaxy, InAlN, ion-beam deposition, elemental analysis, scanning electron microscopy, heterostructures
- Viacheslav A. Lapin – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Researcher, Scientific Research Laboratory of Ceramics and Technochemistry, Scientific Laboratory Complex of Clean Rooms, Physics and Technology Faculty North-Caucasus Federal University
- Ivan V. Kasyanov – Junior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Leading Engineer of the Scientific and Educational Center of Photovoltaics and Nanotechnology, Physics and Technology Department North-Caucasus Federal University
Reference:
Lapin, V.A. The growth of InAlN/Si heterostructures with a high content of In / V.A. Lapin, I.V. Kasyanov // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2022. — I. 14. — P. 168-175. DOI: 10.26456/pcascnn/2022.14.168. (In Russian).
Full article (in Russian): download PDF file
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