Roughness and structure of InGaAsN thin films on Si
North-Caucasus Federal University
Abstract: By the method of pulsed laser deposition in atmosphere of an argon-nitrogen gas mixture, for the first time thin InGaAsN films on GaAs and Si substrates were obtained from the In0,02Ga0,98As target. The In0,02Ga0,98As target was formed by uniaxial pressing from GaAs and InAs powders. The surface morphology and structure of these thin films are studied by atomic force microscopy and X-ray diffraction. It is shown that In0,02Ga0,98As1-yNy films on Si have an average crystal size of 0,93 nm, and In0,02Ga0,98As1-yNy films on GaAs of 0,99 nm. It is determined that a decrease in the pressure of an argon-nitrogen mixture during pulsed laser deposition of thin In0,02Ga0,98As1-yNy films on GaAs and Si substrates leads to a decrease in the value of the root-mean-square roughness of the surface. The smallest root-mean-square roughness equal to 0,25 nm had a thin In0,02Ga0,98As1-yNy film on a GaAs substrate obtained in vacuum, the largest root-mean-square roughness of 19,37 nm had a thin In0,02Ga0,98As1-yNy film on a Si substrate obtained at the argon-nitrogen mixture pressure of 10 Pa -.
Keywords: InGaAsN , pulsed laser deposition, Raman spectra, thin films
- Oleg V. Devitskiy – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Senior Researcher, Scientific and Educational Center for Photovoltaics and Nanotechnology, North-Caucasus Federal University
Devitskiy, O.V. Roughness and structure of InGaAsN thin films on Si / O.V. Devitskiy // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2021. — I. 13. — P. 106-114. DOI: 10.26456/pcascnn/2021.13.106. (In Russian).
Full article (in Russian): download PDF file
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