Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials
Founded at 2009

Roughness and structure of InGaAsN thin films on Si

O.V. Devitskiy

North-Caucasus Federal University

DOI: 10.26456/pcascnn/2021.13.106

Original article

Abstract: By the method of pulsed laser deposition in atmosphere of an argon-nitrogen gas mixture, for the first time thin InGaAsN films on GaAs and Si substrates were obtained from the In0,02Ga0,98As target. The In0,02Ga0,98As target was formed by uniaxial pressing from GaAs and InAs powders. The surface morphology and structure of these thin films are studied by atomic force microscopy and X-ray diffraction. It is shown that In0,02Ga0,98As1-yNy  films on Si have an average crystal size of 0,93 nm, and In0,02Ga0,98As1-yNy films on GaAs of 0,99 nm. It is determined that a decrease in the pressure of an argon-nitrogen mixture during pulsed laser deposition of thin In0,02Ga0,98As1-yNy films on GaAs and Si substrates leads to a decrease in the value of the root-mean-square roughness of the surface. The smallest root-mean-square roughness equal to 0,25 nm had a thin In0,02Ga0,98As1-yNy film on a GaAs substrate obtained in vacuum, the largest root-mean-square roughness of 19,37 nm had a thin In0,02Ga0,98As1-yNy film on a Si substrate obtained at the argon-nitrogen mixture pressure of 10 Pa -.

Keywords: InGaAsN , pulsed laser deposition, Raman spectra, thin films

  • Oleg V. Devitskiy – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Senior Researcher, Scientific and Educational Center for Photovoltaics and Nanotechnology, North-Caucasus Federal University


Devitskiy, O.V. Roughness and structure of InGaAsN thin films on Si / O.V. Devitskiy // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2021. — I. 13. — P. 106-114. DOI: 10.26456/pcascnn/2021.13.106. (In Russian).

Full article (in Russian): download PDF file


1. Sato Y., Kita T., Gozu S. et al. Large spontaneous spin splitting in gate-controlled two-dimensional electron gases at normal In0.75Ga0.25As / In0.75Al0.25As heterojunctions, Journal of Applied Physics, 2001, vol. 89, issue 12, pp. 8017-8021. DOI: 10.1063/1.1362356.
2. Baranov A., Gudovskikh A., Kudryashov D. et al. Defect properties of InGaAsN layers grown as sub-monolayer digital alloys by molecular beam epitaxy, Journal of Applied Physics, 2018, vol. 123, issue 16, pp. 161418-1-161418-11. DOI: 10.1063/1.5011371.
3. Ściana B., Radziewicz D., Dawidowski W. et al. Impact of gallium concentration in the gas phase on composition of InGaAsN alloys grown by AP-MOVPE correlated with their structural and optical properties, Journal of Materials Science: Materials in Electronics, 2019, vol. 30, issue 17, pp. 16216-16225. DOI: 10.1007/s10854-019-01990-x.
4. Albo1 A., Cytermann C., Bahir G., Fekete D. Utilizing the interface adsorption of nitrogen for the growth of high-quality GaInNAs / GaAs quantum wells by metal organic chemical vapor deposition for near infrared applications, Journal of Applied Physics, 2010, vol. 96, issue 14, pp. 141102-1-141102-3. DOI: 10.1063/1.3360216.
5. Goodrich J.C., Borovac D., Tan C.-K., Tansu N. Band anti-crossing model in dilute-As GaNAs alloys, Scientific Reports, 2019, vol. 9, art. no. 5128, 6 p. DOI: 10.1038/s41598-019-41286-y.
6. Shan W., Walukiewicz W., Ager III J.W. et al. Band anticrossing in GaInNAs alloys /, Physical Review Letters, 1999, vol. 82, issue 6, pp. 1221-1224. DOI: 10.1103/PhysRevLett.82.1221.
7. López-Escalante M.C., Ściana B., Dawidowski W. et al. Atomic configurations in AP-MOVPE grown lattice-mismatched InGaAsN films unravelled by X-ray photoelectron spectroscopy combined with bulk and surface characterization techniques, Applied Surface Science, 2018, vol. 433, pp. 1-9. DOI: 10.1016/j.apsusc.2017.10.032.
8. Yonezu H. Elemental devices and circuits for monolithic optoelectronic-integrated circuit fabricated in dislocation-free Si / III–V–N alloy layers grown on Si substrate, Dilute Nitride Semiconductors. Springer Series in Materials Science, vol. 105, ed. by A. Erol. Berlin, Heidelberg, Springer-Verlag, 2008, pp. 405-418. DOI: 10.1007/978-3-540-74529-7.
9. Wanarattikan P., Sanorpim S., Denchitcharoen S. et. al. TEM analysis of planar defects in InGaAsN and GaAs grown on (001) Ge by MOVPE, Key Engineering Materials, 2016, vol. 675-676, pp. 639-642. DOI: 10.4028/
10. Milanova M., Vitanov P., Terziyska P. et al. Structural and electrical characteristics of InGaAsN layers grown by LPE, Journal of Crystal Growth, 2012, vol. 346, issue 1, pp. 79-82. DOI: 10.1016/j.jcrysgro.2012.02.021.
11. Vitanov P. Milanova M., Arnaudov B. et. al. Study of melt-grown GaAsN and InGaAsN epitaxial layers, Journal of Physics: Conference Series, 2010, vol. 253, art. no. 012045, 6 p. DOI: 10.1088/1742-6596/253/1/012045.
12. Kim T.W., Mawst L.J., Kim Y., et al. 13,2 % efficiency double-hetero structure single-junction InGaAsN solar cells grown by MOVPE, Journal of Vacuum Science & Technology A, 2015, vol. 33, issue 2, pp. 021205-1-021205-4. DOI: 10.1116/1.4906511.
13. Chafi A., Pagèsa O., Postnikov A.V. et al. Combined Raman study of InGaAsN from the N-impurity and InGaAs -matrix sides, Applied Physics Letters, 2007, vol. 91, issue 5, pp. 051910-1-051910-3. DOI: 10.1063/1.2767244.
14. Bellil W., Aissat A., Vilcot J.P. Optimization and comparison between the efficiency of GaNAsSb and GaInNAs single solar cells deposed on GaAs , Applied Physics Letters, 2019, vol. 151, pp. 1028-1033. DOI: 10.1016/j.procs.2019.04.145.
15. Ooi Z.V., Saif A.A., Wahab Y., Jamal Z.A.Z. X-ray line profile analysis of BaTiO3 thin film prepared by sol-gel deposition, AIP Conference Proceedings, 2017, vol. 1835, issue 1, pp. 020011-1-020011-5. DOI:10.1063/1.4981833.

⇐ Prevoius journal article | Content | Next journal article ⇒