Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition
O.V. Devitsky1,2, A.A. Kravtsov1,2, I.A. Sysoev2
1 Federal Research Center Southern Scientific Center of the Russian Academy of Sciences
2 North-Caucasus Federal University
Abstract: Uniaxial cold pressing was used to fabricate the GaAs1-yBiy targets with the Bi content of 1 and 22 %. From the obtained targets, pulsed laser deposition of GaAs1-yBiy thin films on the GaAs and Si substrates was carried out for the first time. We studied the composition, Raman and PL spectra of thin GaAs1-yBiy films obtained from targets with 1 and 22 % of Bi . According to the photoluminescence spectra of thin GaAs1-yBiy films on GaAs substrates, it was determined that the maximum content of Bi in the films did not exceed 2,7 %. The results obtained well correlate with the results of the energy dispersive analysis, the composition of films obtained from targets with the Bi content of 1 and 22 % – GaAs0,975Bi0,025 and GaAs0,973Bi0,027 . It was found that the LO (GaBi) phonon mode of associated with disordering during mixing of GaAs and GaBi phases to be at a frequency of 181 cm-1. For the thin film obtained on the Si substrate, the mode LO (GaAs) was observed that was less pronounced and shifted by 3 cm-1 to the left, while the mode TO (GaAs) , forbidden by the selection rules, had a higher intensity and its shift was of about 1 cm-1 relative to the frequency of the mode TO (GaAs) of the thin film obtained on the GaAs substrate.
Keywords: thin films, pulsed laser deposition, GaAs1-yBiy, Raman light scattering, photoluminescence
- Oleg V. Devitsky – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Senior Researcher, Scientific and Educational Center for Photovoltaics and Nanotechnology North-Caucasus Federal University
- Aleksandr A. Kravtsov – Ph. D., Senior Researcher, Laboratory of Physics and Technology of Semiconductor Nanoheterostructures for Microwave Electronics and Photonics, Federal Research Center Southern Scientific Center of the Russian Academy of Sciences, Researcher, Scientific Research Laboratory of Ceramics and Technochemistry, Scientific and Laboratory the complex of clean zones of the Faculty of Physics and Technology of the Federal State Autonomous Educational Institution of Higher Education North-Caucasus Federal University
- Igor A. Sysoev – Dr. Sc., Associate Professor, Director of the Scientific and Educational Center for Photovoltaics and Nanotechnology, North-Caucasus Federal University
Devitsky, O.V. Study of the composition of GaAs1-yBiy films obtained by pulsed laser deposition / O.V. Devitsky, A.A. Kravtsov, I.A. Sysoev // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2021. — I. 13. — P. 96-105. DOI: 10.26456/pcascnn/2021.13.096. (In Russian).
Full article (in Russian): download PDF file
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