Nanostructures as a material for phase-inverse memory

Yu.Ya. Gafner, S.L. Gafner, L.V. Redel
N.F. Katanov Khakas State University

DOI: 10.26456/pcascnn/2018.10.210

Abstract: Despite on long researches, chalcogenide alloys are still generally used in the contemporary PCM layouts as the operating layer material undergoing structural transformations. However, the evolution of the technique aimed at the creation of new non-volatile arrays of information requires different technical solutions. First of all, it deals with the reduction of one bit storage area to several nanometers and reduction of the access time, in particular the possible application in the PCM memory of small metallic nanoclusters.
Keywords: phase transition, memory cells, nanostructures.

Bibliography link:
Gafner, Yu.Ya. Nanostructures as a material for phase-inverse memory / Yu.Ya. Gafner, S.L. Gafner, L.V. Redel // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials: Interuniversity collection of proceedings / Ed. by V.M. Samsonov, N.Yu. Sdobnyakov. – Tver: TSU, 2018. – I. 10. – P. 210-218.

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