Dielectric and photovoltaic properties of heterostructure SiC / Si
O.N. Sergeeva1,4, A.V. Solnyshkin1, S.I. Gudkov1, S.A. Kukushkin2, I.P. Pronin3, G.M. Nekrasova4
1Tver State University
2Institute of Problems of Mechanical Engineering RAS
4Tver State Agricultural Academy
Abstract: The paper presents the results of a study of dielectric and photovoltaic properties of heterostructures SiC / Si with different conductivity type of silicon substrates. The stationary photovoltaic responses of the structures were observed under electromagnetic radiation in the wavelength range from 400 – 980 nm. It is shown that the phase of photovoltaic responses depends on the capacitance jump in C – V characteristics. Possible mechanisms of the photovoltaic phenomena in heterostructures SiC / Si are discussed.
Keywords: SiC / Si heterostructures, dilatation dipole, nanosized silicon carbide, photovoltaic response.
Sergeeva, O.N. SDielectric and photovoltaic properties of heterostructure SiC / Si / O.N. Sergeeva, A.V. Solnyshkin, S.I. Gudkov et al. // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials: Interuniversity collection of proceedings / Ed. by V.M. Samsonov, N.Yu. Sdobnyakov. – Tver: TSU, 2017. – I. 9. – P. 435-441.
Full text (in Russian): download pdf file
Comments are closed.