Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials
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ON THE DEPENDENCIES OF THE MELTING PARAMETERS VERSUS NUMBER OF ATOMS IN THE SILICON NANOCRYSTAL

M.N. Magomedov

DOI: 10.26456/pcascnn/2015.7.358

Original article

Abstract: Using the results of the paper [Zhao, J. Crystallization of silicon nanoclusters with inert gas temperature control / J. Zhao, V. Singh, P. Grammatikopoulos et al. // Physical Review B. – 2015. – V. 91. – I. 3. – P. 035419-1-035419-12] for calculation dependencies of the melting temperature Tm and the temperature of the beginning of crystallization TN on the number of atoms N in the silicon spherical nanocrystal the dependencies on N for the next melting parameters of silicon nanocrystal were obtained: the jump of the melting entropy, latent heat of melting, the slope of the melting line, the jumps of the volume and the surface energy.

Keywords: silicon, nanocrystal, melting, crystallization, heat of melting, jumps of properties at melting

  • M.N. Magomedov

Reference:

Magomedov, M.N. ON THE DEPENDENCIES OF THE MELTING PARAMETERS VERSUS NUMBER OF ATOMS IN THE SILICON NANOCRYSTAL / M.N. Magomedov // Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. — 2015. — I. 7. — P. 358-366. DOI: 10.26456/pcascnn/2015.7.358. (In Russian).

Full article (in Russian): download PDF file

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