Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. Founded at 2009

ON THE DEPENDENCIES OF THE MELTING PARAMETERS VERSUS NUMBER OF ATOMS IN THE SILICON NANOCRYSTAL

M.N. Magomedov

DOI: 10.26456/pcascnn/2015.7.358

Original article

Abstract: Using the results of the paper [Zhao, J. Crystallization of silicon nanoclusters with inert gas temperature control / J. Zhao, V. Singh, P. Grammatikopoulos et al. // Physical Review B. – 2015. – V. 91. – I. 3. – P. 035419-1-035419-12] for calculation dependencies of the melting temperature Tm and the temperature of the beginning of crystallization TN on the number of atoms N in the silicon spherical nanocrystal the dependencies on N for the next melting parameters of silicon nanocrystal were obtained: the jump of the melting entropy, latent heat of melting, the slope of the melting line, the jumps of the volume and the surface energy.

Keywords: silicon, nanocrystal, melting, crystallization, heat of melting, jumps of properties at melting

  • M.N. Magomedov

Reference:

Magomedov M.N. O zavisimosti parametrov plavleniya ot chisla atomov v nanokristalle kremniya [ON THE DEPENDENCIES OF THE MELTING PARAMETERS VERSUS NUMBER OF ATOMS IN THE SILICON NANOCRYSTAL], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2015, issue 7, pp. 358-366. DOI: 10.26456/pcascnn/2015.7.358. ⎘

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