Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials. Founded at 2009

THE TEMPERATURE DEPENDENCE OF THE SURFACE POTENTIAL OF p-TYPE MONOCRYSTALLINE SILICON

V.K. Lyuev, I.V. Lyuev

DOI: 10.26456/pcascnn/2015.7.350

Original article

Abstract: The real surface of the p-type monocrystalline silicon was studied by the method of surface photo-EMF in the temperature range T = 289 – 473 K. A significant difference between the surface electronic states spectra obtained by heating and cooling the samples was found. Heating causes gas desorption and dissociation of water molecules in the surface layer, which reduces the surface potential on the order.

Keywords: photo-EMF, surface potential, p-type silicon

  • V.K. Lyuev
  • I.V. Lyuev

Reference:

Lyuev V.K., Lyuev I.V. Temperaturnaya zavisimost poverkhnostnoj foto EDS monokristallicheskogo kremniya p – tipa [THE TEMPERATURE DEPENDENCE OF THE SURFACE POTENTIAL OF p-TYPE MONOCRYSTALLINE SILICON], Fiziko-khimicheskie aspekty izucheniya klasterov, nanostruktur i nanomaterialov [Physical and chemical aspects of the study of clusters, nanostructures and nanomaterials], 2015, issue 7, pp. 350-353. DOI: 10.26456/pcascnn/2015.7.350. ⎘

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